NDLI: Characterization of high quality ZnO nanowire surface plasmon resonance sensors on Si substrate with perforated aluminum cylindrical micropillar arrays

Content Provider	IEEE Xplore Digital Library
Author	Jen-Cheng Wang Tzer-En Nee
Copyright Year	2010
Description	Author affiliation: Chang Gung University, Institute of Electro-Optical Engineering and Department of Electronic Engineering, 259 Wen-Hwa 1st Road, Kwei-Shan, Tao-Yuan, Taiwan (Jen-Cheng Wang; Tzer-En Nee)
Abstract	Zinc oxide (ZnO) has attracted intensive research effort in recent years, due to its unique properties and versatile applications. The optical characterization of high quality ZnO nanowire surface plasmon resonance (SPR) sensors with perforated cylindrical micropillar arrays is investigated. In-doped ZnO nanowires coupled surface plasmon resonance, from PL spectra, it is found that the In-doped ZnO nanowires have a blue emission at 425 nm, which resulted from the ZnO band-to-band transition with SPR coupling effect. Prior to the arrays of samples were annealed, a broad green emission centered at 500 nm was observed, which is attributed to ZnO native point defects. The relatively strong green band emission results from the radial recombination that arises from the ionized oxygen vacancy. Compare the p-ZnO on Si substrate, the enhancement of PL intensity for p-ZnO with deposited Al pattern film can be attributed to strong coupling interaction with SPR and exciton over a broad temperature range. Electron-hole pairs excited within In-doped ZnO film couple to SP at the metal/semiconductor interface when the energies of excitons in ZnO and the ones of the metal SP energy are resemble. It has found that a unique emission peak on PL spectra due to the SPR effect within In-ZnO interface. These experimental results indicate that a perforated Al array can significantly affect carrier confinement and enhance the quantum efficiency of In-doped ZnO/Al heterostructures due to the interaction of SPR coupling between ZnO nanowire and Al film. It is demonstrated that SPR sensors may attain higher sensitivity with ZnO sensing nanostructures.
Starting Page	521
Ending Page	524
File Size	900416
Page Count	4
File Format	PDF
ISBN	9781424481705
ISSN	19300395
e-ISBN	9781424481699
e-ISBN	9781424481682
DOI	10.1109/ICSENS.2010.5690136
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2010-11-01
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Zinc oxide Silicon Substrates Plasmons Couplings Optical films
Content Type	Text
Resource Type	Article
Subject	Electrical and Electronic Engineering

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