NDLI: Using Residual Stresses to Develop CMOS-compatible RF MEMS Switches

Content Provider	IEEE Xplore Digital Library
Author	Jung-Tang Huang Shao-Yi Li
Copyright Year	2006
Description	Author affiliation: Nat. Taipei Univ. of Technol., Taipei (Jung-Tang Huang; Shao-Yi Li)
Abstract	This research presents a novel MEMS-switches that fabricated with CMOS and post-process techniques of MEMS. This switch includes a controllable cantilever beam and static electrode. The switch is driven by using electrostatic force. So far, the pull-in voltage of MEMS switch is too large to combine with CMOS circuit chip. In addition, the residual stress produced from CMOS process will cause a large deflection of cantilever beam. Therefore, in this research, we use CoventorWare to inspect the feasibility about deflection of cantilever beam that caused by residual stress. Accordingly, we make use of deflection of cantilever beam as the principle of design. The cantilever beam is set in the reverse direction. And, a blocking layer can be used to constrain deflection of cantilever beam to diminish the pull-in voltage. Subsequently, the pull-in voltage can be reached below 3.3V. By defining the region of etching holes (RLS) preliminarily, silicon beneath could be excavated to reduce substrate loss and increase isolation. Only one etching process is needed in post-process to release the cantilever beam. Finally, we use thick photoresist to complete self-packaging to lower down the cost of chip fabrication. The advantages of this MEMS switch are as follows: small area, low pull-in voltage, uncomplicated fabrication, and compatible with CMOS process. We only use via layer, metal layer and poly layer of TSMC 0.35 mum 2P4M CMOS process to fabricate our design.
Starting Page	1
Ending Page	6
File Size	2660817
Page Count	6
File Format	PDF
ISBN	9781424408337
DOI	10.1109/EMAP.2006.4430646
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2006-12-11
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Residual stresses Radiofrequency microelectromechanical systems Structural beams Switches Voltage CMOS process Microswitches Etching CMOS technology Micromechanical devices
Content Type	Text
Resource Type	Article

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in

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