NDLI: Low power LDO with fast load transient response based on quick response circuit

Content Provider	IEEE Xplore Digital Library
Author	Socheat Heng Weichun Tung Cong-Kha Pham
Copyright Year	2009
Description	Author affiliation: University of Electro-Communications, Chofu-shi, 182-8585, Japan (Socheat Heng; Cong-Kha Pham) \|\| Tamkang University, Taiwan (Weichun Tung)
Abstract	In this work, we propose a design technique of low power fully CMOS low-dropout voltage regulator (LDO) based on quick response (QR) circuit to improve the load transient response. Implemented in 0.18µm CMOS technology, the LDO with proposed QR circuit can achieve a fast load transient responses with less transient overshoot or undershoot when driving a large load current. For 1µF decoupling capacitor and 0.1mA-150mA load current change, the output undershoot and overshoot are 196mV and 172mV while the settling time is approximately 60µs and 65µs respectively . The proposed circuit dissipates a very low static power, with only 8.5µA for light load and 35µA for heavy load for output voltage VOUT = 1.2V and input voltage VDD = VOUT+1.0V . This includes the reference circuit, the over current protection circuit as well as the feedback network.
Starting Page	2529
Ending Page	2532
File Size	798946
Page Count	4
File Format	PDF
ISBN	9781424438273
DOI	10.1109/ISCAS.2009.5118316
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-05-24
Publisher Place	Taiwan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Transient response Voltage MOSFET circuits Power MOSFET Regulators Capacitors Personal digital assistants Energy consumption Capacitance CMOS technology
Content Type	Text
Resource Type	Article

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2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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