NDLI: Fabrication and characterization of emerging nanoscale memory

Content Provider	IEEE Xplore Digital Library
Author	SangBum Kim Yuan Zhang Byoungil Lee Caldwell, M. Wong, H.-S.P.
Copyright Year	2009
Description	Author affiliation: Department of Electrical Engineering, Stanford University, CA 94305, USA (SangBum Kim; Yuan Zhang; Byoungil Lee; Wong, H.-S.P.) \|\| Department of Chemistry, Stanford University, CA 94305, USA (Caldwell, M.)
Abstract	Conventional solid state memory technologies such as flash memory, DRAM, and SRAM are facing scaling challenges due to fundamental limitations. Therefore, various new memory technologies are being widely researched and evaluated to continue the cost/performance improvement trend of solid state memory devices. To assess the potential scalability of emerging nanoscale memory beyond conventional limits, it is essential to characterize and understand how differently they perform at the nanoscale compared to known properties in the microscale. New nanoscale fabrication methods and new memory technologies offer a great opportunity for future memory device research. In this regard, we evaluated characteristics of nanoscale phase change memory and Ni oxide memory using nanofabrication technologies such as nanowire growth, nanocrystal synthesis, diblock copolymer patterning, and ebeam lithography. Evaluated characteristics include not only their device performance but also key material properties that might affect the ultimate device performance. The nanofabrication method for each memory material is also discussed due to its potential to overcome the difficulties of conventional semiconductor fabrication process.
Starting Page	65
Ending Page	68
File Size	1714836
Page Count	4
File Format	PDF
ISBN	9781424438273
DOI	10.1109/ISCAS.2009.5117686
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-05-24
Publisher Place	Taiwan
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Fabrication Solid state circuits Random access memory Nanofabrication Flash memory Costs Scalability Nanoscale devices Phase change memory Nanocrystals
Content Type	Text
Resource Type	Article

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1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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