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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Tolpygo, S.K. Cimpoiasu, E. Liu, X. Simonian, N. Polyakov, Yu.A. Lukens, J.E. Likharev, K.K. |
| Copyright Year | 2002 |
| Abstract | We have measured DC I-V curves of niobium-trilayer (Nb/Al/AlO/sub x//Nb) junctions with barriers thermally grown within a broad range of oxygen exposure E=Pt, from 2/spl times/10/sup 5/ to 2/spl times/10/sup 9/ Pa-s, and for applied electric fields ranging from zero all the way up to the breakdown - typically, above 10 MV/cm. The data can be reasonably well fitted by the direct theory assuming trapezoidal barrier profile and using the numerical solution of the Schrodinger equation. (The traditional WKB approximation gives considerable errors for barriers so thin and sharp.) The fitting has shown that with the increase of oxygen exposure, the effective oxide thickness d/sub ef//spl equiv/(m/m/sub 0/)/sup /spl alpha//d where m is the effective mass of the tunneling electron and (/spl alpha//spl ap/0.51) grows from 0.83 to 1.08 nm, while the average barrier height grows from 1.7 to 1.9 eV, and the zero-voltage conductance G/sub 0/ continues to drop as E/sup -1/2/ through all the studied exposure range. |
| Sponsorship | Council on Superconductivity Appl. Superconductivity Conference Inc MIT |
| Starting Page | 99 |
| Ending Page | 102 |
| Page Count | 4 |
| File Size | 579011 |
| File Format | |
| ISSN | 10518223 |
| Volume Number | 13 |
| Issue Number | 2 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2003-06-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Niobium Tunneling Electrons Josephson junctions Fabrication Electric breakdown Schrodinger equation Effective mass Superconducting epitaxial layers Quantum computing |
| Content Type | Text |
| Resource Type | Article |
| Subject | Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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