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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Xiaofan Meng Van Duzer, T. |
| Copyright Year | 2002 |
| Abstract | We have developed a new approach for high critical current density (J/sub c/) small junction fabrication. The key step is light anodization that forms a thin double-layer of Al/sub 2/O/sub 3//Nb/sub 2/O/sub 5/ oxides around the junction area and on the sidewalls of the junction. This anodization ring is a good dry-etch stop, so the via for the junction contact can be larger than the junction area. The anodization ring can also protect the junction from plasma damage during dry etching and sputtering steps; therefore, it can reduce the junction leakage current and critical-current spread. The new technique is very simple and cost effective compared with the CMP approach. It needs only one additional mask and process step. We have used the technique to fabricate high-J/sub c/ submicron Nb/Al-AlO/sub x//Nb tunnel junctions with very low critical-current spreads. Using this technique, we have also fabricated Nb SQUID's and various Nb digital IC's. |
| Sponsorship | Council on Superconductivity Appl. Superconductivity Conference Inc MIT |
| Starting Page | 91 |
| Ending Page | 94 |
| Page Count | 4 |
| File Size | 701961 |
| File Format | |
| ISSN | 10518223 |
| Volume Number | 13 |
| Issue Number | 2 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2003-06-01 |
| Publisher Place | U.S.A. |
| Access Restriction | One Nation One Subscription (ONOS) |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Niobium Critical current density Fabrication Protection Plasma applications Dry etching Sputtering Leakage current Costs Digital integrated circuits |
| Content Type | Text |
| Resource Type | Article |
| Subject | Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering |
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