NDLI: Effect of Electrical Stress on Josephson Tunneling Characteristics of <formula formulatype=inline><tex Notation=TeX>${rm Nb/Al/AlO}

Content Provider	IEEE Xplore Digital Library
Author	Amparo, D. Tolpygo, S.K.
Copyright Year	2002
Abstract	Fabrication-induced variations in the critical currents of Josephson junctions significantly affect the performance and yield of complex superconducting integrated circuits. Electrical stress that may develop during plasma processing steps in the fabrication process was initially suggested as a possible cause of these variations. The effect on the Josephson and quasiparticle tunneling properties of Nb/Al/AlO_x/Nb junctions with ultrathin AlO_x barriers by the application of dc electrical stress was investigated. Current ramps with increasing amplitude corresponding to voltages across the barrier up to ~ 0.65 V were used to apply electrical stress. Junction conductance and current-voltage (I-V) characteristics were measured after each stress application at room temperature. As the stressing progresses, a dramatic increase in subgap conductance of the junctions, the appearance of subharmonic current steps, and a gradual increase in both the critical and the excess currents as well as a decrease in the normal-state resistance have been observed. A model is proposed wherein a progressively increasing number of defects and associated additional conduction channels (superconducting quantum point contacts (SQPCs)) are induced by the applied electric field in the tunnel barrier. The dependence of the stress effect on the polarity is also investigated and the results are presented. It is found that the magnitude of stress current needed for junction breakdown is unlikely to be supplied during plasma processing and as such, potential differences that can develop during plasma processing appear to be an unlikely cause of fabrication-induced, circuit pattern-dependent variations of Josephson junctions' critical currents in superconductor integrated circuits.
Sponsorship	Council on Superconductivity Appl. Superconductivity Conference Inc MIT
Starting Page	154
Ending Page	158
Page Count	5
File Size	290011
File Format	PDF
ISSN	10518223
Volume Number	19
Issue Number	3
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-06-01
Publisher Place	U.S.A.
Access Restriction	One Nation One Subscription (ONOS)
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Niobium Stress Tunneling Josephson junctions Superconducting integrated circuits Plasma materials processing Critical current Integrated circuit yield Plasma properties Fabrication tunneling Dielectric breakdown Josephson effect superconductor electronics
Content Type	Text
Resource Type	Article
Subject	Condensed Matter Physics Electronic, Optical and Magnetic Materials Electrical and Electronic Engineering

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