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Content Provider | IEEE Xplore Digital Library |
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Author | Kelber, J. Zhou Mi Gaddam, S. Cao Yuan Foyle, S. Lingmei Kong Dowben, P. |
Copyright Year | 2012 |
Description | Author affiliation: Department of Chemistry, University of North Texas, Denton, TX 76203 USA (Kelber, J.; Zhou Mi; Gaddam, S.; Cao Yuan; Foyle, S.) || Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska-Lincoln, Lincoln, NE 68588-0299 USA (Lingmei Kong; Dowben, P.) |
Abstract | We have directly grown monolayer and few layer graphene on h-BN(0001), MgO(111), and Co(111) by a variety of methods, including chemical or physical vapor deposition (CVD, PVD), or molecular beam epitaxy (MBE). Such capability is critical to the development of graphene charge- and spin-based devices. In each case, the interactions of graphene with the substrate give rise to distinct graphene properties with significant device implications. These effects include substantial n-type doping (graphene/monolayer h-BN(0001)), formation of a 0.5–1eV band gap (graphene/MgO(111), and magnetic polarization of the graphene conduction electrons (graphene/Co(111)). The results on BN and MgO have significant implications for the formation of field effect transistor (FET)-like devices, while the results on Co(111) suggest the feasibility of room temperature spin valves with high magnetoresistance and very low power demands. |
Starting Page | 1 |
Ending Page | 4 |
File Size | 356737 |
Page Count | 4 |
File Format | |
ISBN | 9781467324748 |
e-ISBN | 9781467324755 |
DOI | 10.1109/ICSICT.2012.6467942 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2012-10-29 |
Publisher Place | China |
Access Restriction | Subscribed |
Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Subject Keyword | Graphene Photonic band gap Substrates Charge transfer Molecular beam epitaxial growth Image reconstruction |
Content Type | Text |
Resource Type | Article |
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