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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Liu Chen Yu-Ming Zhang Hong-Liang Lu Yi-Men Zhang |
| Copyright Year | 2012 |
| Description | Author affiliation: School of Microelectronics, Xidian University, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China (Liu Chen; Yu-Ming Zhang; Hong-Liang Lu; Yi-Men Zhang) |
| Abstract | In this paper, The Effect of Gate Dielectric Al/ZnO on Interface Quality with N-GaAs has been investigated. The results measured by X-ray photoelectron spectroscopy show that the presence of ZnO can effectively suppress the formation of oxides at the interface between the GaAs and Al. Using Terman method, the interface trap density has been extracted from C-V curves. It is found that the ZnO layer can effectively improve the interface quality. |
| Starting Page | 1 |
| Ending Page | 3 |
| File Size | 329197 |
| Page Count | 3 |
| File Format | |
| ISBN | 9781467324748 |
| e-ISBN | 9781467324755 |
| DOI | 10.1109/ICSICT.2012.6467640 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2012-10-29 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Zinc oxide Aluminum oxide Gallium arsenide Logic gates Capacitance-voltage characteristics Passivation interface trap density GaAs metal-oxide-semiconductor capacitor ALD |
| Content Type | Text |
| Resource Type | Article |
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