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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Zi-Qi Zhao De-Wei Liao Jiang-Feng Du |
| Copyright Year | 2012 |
| Description | Author affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China (Zi-Qi Zhao; Jiang-Feng Du) || Department of Computer, Pingxiang College, Pingxiang, 337055, China (De-Wei Liao) |
| Abstract | In this paper, the effects of surface traps on the breakdown voltage (V) of passivated AlGaN/GaN high electron mobility transistors (HEMTs) are investigated by using DC stress measurements under the temperature range from 25 °C to 200 °C. The V shows a monotonically increase with temperature, stress time and stress voltage. The charging time of the surface traps ∼300s is obtained for the devices with 400nm-thick SiN passivation. Moreover, a critical electric field for the charging of surface trap is obtained, and the value is ∼0.12MV/cm at room temperature and ∼0.09MV/cm at 200 °C. The results show that the surface passivation does not eliminate the effects of the surface traps, but just turn them into long-term effects. |
| Starting Page | 1 |
| Ending Page | 3 |
| File Size | 771096 |
| Page Count | 3 |
| File Format | |
| ISBN | 9781467324748 |
| e-ISBN | 9781467324755 |
| DOI | 10.1109/ICSICT.2012.6467595 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2012-10-29 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Stress HEMTs MODFETs Surface charging Electron traps Aluminum gallium nitride Gallium nitride |
| Content Type | Text |
| Resource Type | Article |
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