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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Kangliang Wei Lang Zeng Juncheng Wang Yahua Peng Gang Du Xiaoyan Liu |
| Copyright Year | 2012 |
| Description | Author affiliation: Institute of Microelectronics, Peking University, Beijing 100871, China (Kangliang Wei; Lang Zeng; Juncheng Wang; Yahua Peng; Gang Du; Xiaoyan Liu) |
| Abstract | In this paper, we investigate the band-to-band tunneling (BTBT) in Si/Ge and Si/Si heterojunctions by employing a two-dimensional (2D) full band Monte Carlo (FBMC) heterojunction simulator. The FBMC simulator is used to get the electrostatic potential and field in a heterojunction, based on which we can calculate the BTBT rate and current by Hurkx's tunneling model. The model parameters have been carefully calibrated to reproduce the experimental reverse current in a Si p-n junction. With this framework, it is shown that the BTBT current in the Si/Ge or Si/Si heterojunction is largely enhanced when compared with conventional Si homojunctions. We ascribe this to the smaller bandgap of Ge and the SiGe alloy than that of Si. It is further found that whether the smaller bandgap material is used as the relative lower or higher doping side of the heterojunction is much different. The former can produce a BTBT current significantly larger than that of the latter. |
| Starting Page | 1 |
| Ending Page | 3 |
| File Size | 603358 |
| Page Count | 3 |
| File Format | |
| ISBN | 9781467324748 |
| e-ISBN | 9781467324755 |
| DOI | 10.1109/ICSICT.2012.6467678 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2012-10-29 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Silicon Heterojunctions Photonic band gap Metals Current density Tunneling P-n junctions |
| Content Type | Text |
| Resource Type | Article |
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