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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Zhang, J.F. Ji, Z. Duan, M. Zhang, W. |
| Copyright Year | 2012 |
| Description | Author affiliation: School of Engineering, Liverpool John Moores University, Liverpool L3 3AF, UK (Zhang, J.F.; Ji, Z.; Duan, M.; Zhang, W.) |
| Abstract | Interface state density is a key property for MOS devices in process development, material selection, and device simulation. Early attentions were focused on interface states within the bandgap of silicon. The interface states beyond bandgap (SBB) are often implicitly assumed to be negligible, but this is not experimentally verified. The existing techniques cannot probe SBB and the objective of this work is to develop a new characterisation technique for SBB. Based on a pulse capacitance voltage measurement, we will show that SBB can reach the order of $10^{13}cm^{−2}eV^{−1}$ and their neglect leads to a substantial underestimation of channel carrier mobility. The SBB are extrinsic and these results open the way to the exploration of their origin and suppression through process optimisation. |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 546610 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781467324748 |
| e-ISBN | 9781467324755 |
| DOI | 10.1109/ICSICT.2012.6467644 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2012-10-29 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Capacitance Photonic band gap Logic gates Interface states Silicon Leakage current Capacitance measurement |
| Content Type | Text |
| Resource Type | Article |
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