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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Qi Wang Pei Wang Yong-Heng Jiang Kun Zhou Guo-Liang Yao Xiao-Rong Luo |
| Copyright Year | 2012 |
| Description | Author affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China, Chengdu 610054, China (Qi Wang; Pei Wang; Yong-Heng Jiang; Kun Zhou; Guo-Liang Yao; Xiao-Rong Luo) |
| Abstract | A new super junction (SJ) VDMOS with an extended high permittivity (HK) dielectric-filling trench is proposed. A narrow N/P column in the SJ structure can be realized by using trench technology and angled ion implantation. The assistant depletion caused by the HK dielectric increases doping concentration of the N-drift region and thus reduces the specific on-resistance (Ron, sp). Furthermore, HK dielectric weakens the charge balance sensitivity to the N-drift doping. The HK dielectric also reshapes the electric field distribution so as to improve the breakdown voltage (BV). Blocking and on-state characteristics have been investigated by simulation. The HK trench SJ VDMOS reduces Ron, sp by 50% and increases BV by 12% compared with those of the conventional SJ VDMOS. |
| Starting Page | 1 |
| Ending Page | 3 |
| File Size | 313068 |
| Page Count | 3 |
| File Format | |
| ISBN | 9781467324748 |
| e-ISBN | 9781467324755 |
| DOI | 10.1109/ICSICT.2012.6467703 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2012-10-29 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Permittivity Dielectrics Ion implantation Doping Materials Electric fields Sensitivity |
| Content Type | Text |
| Resource Type | Article |
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