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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Chao-Sung Lai Chih-Ting Lin Jer-Chyi Wang Chu-Fa Chan |
| Copyright Year | 2012 |
| Description | Author affiliation: MFC Sealing Technology Co., LTD., New Taipei Industrial Park, New Taipei City, 24888, Taiwan (Chu-Fa Chan) || Department of Electronic Engineering, Chang Gung University, Kwei-shan, Taoyuan, 333, Taiwan (Chao-Sung Lai; Chih-Ting Lin; Jer-Chyi Wang) |
| Abstract | As a potential candidate for future nonvolatile memory (NVM) application, the discrete charge storage nodes formed as the nanocrystal (NC) structure has been caught much attention. Among the NC materials, high-k metal oxide is the unique one due to the mixed chemical reactions during high temperature forming process. The over-view of gadolinium oxide nanocrystal (Gd-NC) memory is revealed in this paper. Gd-NC was formed by one step rapid thermal annealing treated on the amorphous Gd film prepared by sputter system. The optical tests were conducted to exam the bandgap value of the Gd-NC and the x-ray tests were conducted to exam the valence band offset. The charge trapping phenomenon can be characterized by the retention tests for various temperatures. Forming gas annealing was treated on the Gd-NC to passivate the deep traps. A band engineered method by CF plasma treatment was also conducted to improve the memory characteristics. |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 1118405 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781467324748 |
| e-ISBN | 9781467324755 |
| DOI | 10.1109/ICSICT.2012.6467581 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2012-10-29 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Plasmas Photonic band gap Silicon Films Tunneling Charge carrier processes Logic gates |
| Content Type | Text |
| Resource Type | Article |
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