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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Sheng Kai Wang Bai-Qing Xue Bing Sun Hui-Li Liang Zeng-Xia Mei Wei Zhao Xiao-Long Du Hong-Gang Liu |
| Copyright Year | 2012 |
| Description | Author affiliation: Microwave Device and IC Department, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China (Sheng Kai Wang; Bai-Qing Xue; Bing Sun; Wei Zhao; Hong-Gang Liu) || Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China (Hui-Li Liang; Zeng-Xia Mei; Xiao-Long Du) |
| Abstract | Ge is a promising candidate to replace Si for advanced MOSFET because of its high mobility. Main obstacles to obtain a high-quality high-k/Ge interface for high performance Ge-MOSFETs are: i) thermal instability at the high-k/Ge interface; ii) high-k/Ge interface is highly defective; iii) leakage current through the high-k/Ge stack is high. Therefore, high-k/Ge interface needs to be passivated. In this contribution, various passivation ways including N∗-, HCl-, (NHS- treatment, and epitaxial BeO layer insertion were investigated. The impacts of these passivation ways in stability enhancement, defects reduction, and gate leakage suppression were discussed. |
| Starting Page | 1 |
| Ending Page | 3 |
| File Size | 997508 |
| Page Count | 3 |
| File Format | |
| ISBN | 9781467324748 |
| e-ISBN | 9781467324755 |
| DOI | 10.1109/ICSICT.2012.6467608 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2012-10-29 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Thermal stability High K dielectric materials Passivation Substrates Epitaxial growth Dielectrics |
| Content Type | Text |
| Resource Type | Article |
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