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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Chun-Yan Jin Jin-Yan Wang Min Fang Jin-Bao Cai Yang Liu Zhen Yang Bo Zhang Wen-Gang Wu Jin-Cheng Zhang |
| Copyright Year | 2012 |
| Description | Author affiliation: Institute of Microelectronics, Peking University, Beijing 100871, China (Chun-Yan Jin; Jin-Yan Wang; Min Fang; Jin-Bao Cai; Yang Liu; Zhen Yang; Bo Zhang; Wen-Gang Wu) || Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Microelectronics Institute, Xidian University, Xi'an 710071, China (Jin-Cheng Zhang) |
| Abstract | In this paper, a GaN-based metal-semiconductor-metal planar inter-digitated varactor is analyzed. The quality factor of the inter-digitated varactor with finger width of 0.25μm and space between fingers of 7μm on sapphire is 31.9 at 100MHz, and the tunable capacitance ranges fro m 0.19pF to 0.89pF. The characteristics of this varactor with different finger's widths and spaces are analyzed. It is shown that the maximum capacitance depends on the total area of fingers and the minimum capacitance lies on fingers' width and the space between fingers. When either width or space is fixed, the minimum capacitance decreases with the increase of the other one. |
| Starting Page | 1 |
| Ending Page | 3 |
| File Size | 467111 |
| Page Count | 3 |
| File Format | |
| ISBN | 9781467324748 |
| e-ISBN | 9781467324755 |
| DOI | 10.1109/ICSICT.2012.6467746 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2012-10-29 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Fingers Capacitance Varactors HEMTs MODFETs Gallium nitride Aluminum gallium nitride GaN inter-digitated varactor compatible process |
| Content Type | Text |
| Resource Type | Article |
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