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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Shou-Yi Kuo Fang-I Lai Wei-Chun Chen Woei-Tyng Lin Chien-Nan Hsiao Yu-Kai Liu Ji-Lin Shen |
| Copyright Year | 2009 |
| Description | Author affiliation: Department of Electro-Optical Engineering, Yuan-Ze University, 135 Yuan-Tung Road, Chung-Li 320, Taiwan, China (Woei-Tyng Lin) || Department of Physics, Chung Yuan Christian University, 200, Chung Pei Rd, Chung Li, 32023, Taiwan, China (Yu-Kai Liu; Ji-Lin Shen) || Department of Electrical Engineering, Yuan-Ze University, 135 Yuan-Tung Road, Chung-Li 320, Taiwan, China (Fang-I Lai) || Instrument Technology Research Center, National Applied Research Laboratories 20 R&D Road VI, Hsinchu Science Park, Hsinchu 300, Taiwan, China (Wei-Chun Chen; Chien-Nan Hsiao) || Department of Electronic Engineering, Chang Gung University 259 Wen-Hwa 1st Road, Kwei-Shan Tao-Yuan 333, Taiwan, China (Shou-Yi Kuo) |
| Abstract | High orientation InN films on oxide buffer layer were grown by MOMBE. Near-infrared emission peak, centered at 0.75 eV, was observed from PL measurement. Experimental results reveal that oxide buffer layer can be used in lattice-mismatched III-V heteroepitaxial systems. |
| Starting Page | 1 |
| Ending Page | 2 |
| File Size | 356954 |
| Page Count | 2 |
| File Format | |
| ISBN | 9781424438297 |
| DOI | 10.1109/CLEOPR.2009.5292468 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-08-30 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Buffer layers Molecular beam epitaxial growth Photonic band gap Substrates Indium Zinc oxide Radio frequency III-V semiconductor materials Pulsed laser deposition Transistors Heteroepitaxial Indium nitride MOMBE |
| Content Type | Text |
| Resource Type | Article |
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