NDLI: Novel method to operate piezo-FET-based stress sensor offers tenfold increase in sensitivity

Content Provider	IEEE Xplore Digital Library
Author	Becker, F. Kuhl, M. Manoli, Y. Paul, O.
Copyright Year	2015
Description	Author affiliation: Dept. of Microsyst. Eng., Univ. of Freiburg, Freiburg, Germany (Becker, F.; Kuhl, M.; Manoli, Y.; Paul, O.)
Abstract	This paper presents a novel method to operate Wheatstone bridges of piezoresistive field effect transistors (FETs) as stress sensors. Such structures consist of a square arrangement of four FETs connected by the source/drain diffusion in each corner. When the FETs are on and the bridge is operated with an input voltage between a pair of opposite contacts, the bridge output voltage appearing between the perpendicular contact pair is proportional to the difference of in-plane normal stress components. In the new method the resistivity of one of the four FETs is individually tuned by varying its gate voltage by ΔV from the common gate voltage of the other three gates, in order to rebalance the bridge. We find that the corresponding sensitivity normalized to the input voltage reaches 4.5 mV/(V MPa). It is thus a factor of about 10 higher than the conventional sensitivity based on the bridge output voltage, which reaches 490 μV (V MPa).
Sponsorship	IEEE
Starting Page	1
Ending Page	4
File Size	1748589
Page Count	4
File Format	PDF
e-ISBN	9781479982035
DOI	10.1109/ICSENS.2015.7370482
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-11-01
Publisher Place	South Korea
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Stress Logic gates Voltage measurement Field effect transistors Bridge circuits Sensitivity CMOS integrated circuits piezo-FET CMOS mechanical stress sensor
Content Type	Text
Resource Type	Article

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