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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Ghosh, A. Bannerjee, R. Majumder, S.B. |
| Copyright Year | 2015 |
| Description | Author affiliation: Electron. & Commun. Eng., S'O'A Univ., Bhubaneswar, India (Bannerjee, R.) || Mater. Sci. Centre, Indian Inst. of Technol. Kharagpur, Kharagpur, India (Ghosh, A.; Majumder, S.B.) |
| Abstract | The n to p type carrier reversal conductivity is observed in cobalt doped zinc oxide (Co_ZnO) thin films with cobalt content from 0.001 to 0.5 wt% in hydrogen (H2) gas. Maximum response (220.6 %) and p-type conductivity is achieved in H2 gas at lower operating temperature (200oC) using 0.01 wt% Co_ZnO thin film where n-type conductivity is observed at higher operating temperatures which provide selective H2 sensing. The n and p type conductivity are observed at 250oC but the response (%) is less. Below 250oC it shows fully p-type conductivity in presence of H2 gas. By decreasing operating temperature, O2" molecular oxygen ions might be dominant to chemi-adsorb and creates OH" on sensor surface by reacting with H2 gas which increase the sensor resistance and shows p-type conductivity. The effect of interstitial defects and oxygen vacancies are also studied for n to p carrier reversal using photo luminescence spectra of undoped and Co_ZnO thin films. |
| Sponsorship | IEEE |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 1220060 |
| Page Count | 4 |
| File Format | |
| e-ISBN | 9781479982035 |
| DOI | 10.1109/ICSENS.2015.7370358 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2015-11-01 |
| Publisher Place | South Korea |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Zinc oxide II-VI semiconductor materials Conductivity Temperature sensors Cobalt Gas Sensing Thin films Carrier Reversal Cobalt Doping |
| Content Type | Text |
| Resource Type | Article |
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