NDLI: Oxide or metal interface damage improvement of deep silicon etch process by low power RF of low frequency

Content Provider	IEEE Xplore Digital Library
Author	Shyh-Wei Cheng Jui-Chun Weng Chung-Hsien Hung Chun-Peng Li Chin-Hau Meng Kai-Chih Liang Weileun Fang
Copyright Year	2015
Description	Author affiliation: Taiwan Semicond. Manuf. Co., Ltd., Taiwan (Jui-Chun Weng; Chung-Hsien Hung; Chun-Peng Li; Chin-Hau Meng) \|\| Dept. of Dept. of Power Mech. Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan (Shyh-Wei Cheng; Kai-Chih Liang; Weileun Fang)
Abstract	This study investigates the damage of the heterogeneous interface either dielectric oxide or metal materials induced by through silicon deep reactive ion etching (DRIE) process at the predefined bottom cavity area first time and establishes the failure model of the interface damage as well as metal re-deposition introduced by the silicon DRIE process. Thus, the DRIE process of low power and low frequency bias-RF is proposed to resolve the aforementioned problems by electrical testing verification. In applications, the Si-above-CMOS (TSMC 0.18μm generic CMOS process) process platform has been employed to demonstrate the present process approach. The fabrication results demonstrate that the problems of metal (or oxide) interface-layer damage and current leakage of CMOS-to-MEMS (or MEMS-to-MEMS) are prevented. Thus, the yield and performances of the capacitive motion sensors implemented using the Si-above-CMOS platform are significantly improved.
Sponsorship	IEEE
Starting Page	1
Ending Page	4
File Size	893677
Page Count	4
File Format	PDF
e-ISBN	9781479982035
DOI	10.1109/ICSENS.2015.7370283
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2015-11-01
Publisher Place	South Korea
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Silicon Metals Micromechanical devices Etching Cavity resonators CMOS integrated circuits metal re-deposition Deep reactive ion etching(DRIE) through silicon
Content Type	Text
Resource Type	Article

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