NDLI: Research on non-uniform emitter spacing technology to improve thermal stability of multi-finger SiGe HBT under High-Power

Content Provider	IEEE Xplore Digital Library
Author	Zhao Xin Zhang Wan-Rong Jin Dong-Yue Xie Hong-Yun Fu Qiang Zhang Dong-Hui Liu Bo-Yu Zhou Yong Qiang
Copyright Year	2011
Description	Author affiliation: College of Electronic Information and Control Engineering, Beijing University of Technology, 100124, China (Zhao Xin; Zhang Wan-Rong; Jin Dong-Yue; Xie Hong-Yun; Fu Qiang; Zhang Dong-Hui; Liu Bo-Yu; Zhou Yong Qiang)
Abstract	An electro-thermal feedback model for multi-finger power SiGe heterojunction bipolar transistor (HBT) was presented in this paper. Based on the model, the influence of the change of emitter finger spacing on the surface temperature distribution of SiGe HBT was investigated. It is found that under the same bias conditions, with the increase of emitter finger spacing, the peak junction temperature drops while the temperature difference among emitter fingers decreases, but the non-uniform temperature distribution still exists. Based on this conclusion, an optimization method for non-uniform emitter finger spacing (NUSE) was proposed without increasing the chip area. In order to thoroughly study the improvement effect of NUSE, the surface temperature distribution of novel SiGe HBT with NUSE under various bias conditions is simulated. The results show that under different bias conditions, the peak junction temperature of the novel device fall obviously, and the uniformity of temperature distribution on emitter fingers was significantly improved, which can not be achieved for SiGe HBT with traditional uniform emitter finger spacing (UES) structure. The superiority of NUSE technology is exhibited.
Starting Page	1645
Ending Page	1648
File Size	215105
Page Count	4
File Format	PDF
ISBN	9781424480364
e-ISBN	9781424480395
DOI	10.1109/ICEICE.2011.5777756
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-04-15
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature distribution SiGe Heterojunction bipolar transistor Fingers Heating Non-uniform emitter finger spacing (NUSE) structure Heterojunction bipolar transistors Junctions Thermal stability Silicon germanium
Content Type	Text
Resource Type	Article

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