NDLI: Study on the reliability of AlGaN/GaN HEMTs at high temperature

Content Provider	IEEE Xplore Digital Library
Author	Yang Juan Zhang Xiaoling Lv Changzhi
Copyright Year	2011
Description	Author affiliation: Reliability Physics Lab, Beijing University of Technology, China (Yang Juan; Zhang Xiaoling; Lv Changzhi)
Abstract	Fundamentals of current conduction of the AlGaN/GaN HEMTs have been studied under the temperature ranging from 26°C to 250°C. It's found that the maximum drain-source current (IDS) decreases with rising temperature, and the temperature dependent of IDS has a negative coefficient of −0.31 mA/mm · °C. This deterioration mainly cause by decreasing in mobility. And a rise in temperature is accompanied with an increase in barrier height and a reduction in ideality factor. Mechanisms are suggested, including thermionic emission, field emission, trap-assisted tunneling and so on. It's also found that reverse leakage current increases first and then decreases with rising temperature, and the dominant mechanisms are the effects of piezoelectric polarization field and variation of two-dimensional electron gas charge density. The remarkable finding is that breakdown voltage has a trend opposite to that of the reverse leakage current, and the minimum occurred at around 175°C.
Starting Page	774
Ending Page	777
File Size	501734
Page Count	4
File Format	PDF
ISBN	9781424480364
e-ISBN	9781424480395
DOI	10.1109/ICEICE.2011.5777464
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2011-04-15
Publisher Place	China
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Temperature measurement Temperature dependence Breakdown voltage Reverse current Temperature HEMT Schottky barrier height HEMTs Gallium nitride MODFETs Ideality factor Aluminum gallium nitride
Content Type	Text
Resource Type	Article

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