NDLI: Nonvolatile memristor memory: Device characteristics and design implications

Content Provider	IEEE Xplore Digital Library
Author	Yenpo Ho Huang, G.M. Peng Li
Copyright Year	2009
Description	Author affiliation: Dept. of ECE, Texas A&M University, College Station, TX 77843 (Yenpo Ho; Huang, G.M.; Peng Li)
Abstract	The search for new nonvolatile universal memories is propelled by the need for pushing power-efficient nanocomputing to the next higher level. As a potential contender for the next-generation memory technology of choice, the recently found “the missing fourth circuit element”, memristor, has drawn a great deal of research interests. In this paper, we characterize the fundamental electrical properties of memristor devices by encapsulating them into a set of compact closed-form expressions. Our derivations provide valuable design insights and allow a deeper understanding of key design implications of memristor-based memories. In particular, we investigate the design of read and write circuits and analyze data integrity and noise-tolerance issues.
Starting Page	485
Ending Page	490
File Size	385026
Page Count	6
File Format	PDF
ISBN	9781605588001
ISSN	10923152
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-11-02
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Association for Computing Machinery, Inc. (ACM)
Subject Keyword	Nonvolatile memory Memristors Voltage Closed-form solution Circuit analysis Circuit noise Random access memory Flash memory Electric resistance Capacitance
Content Type	Text
Resource Type	Article
Subject	Computer Graphics and Computer-Aided Design Computer Science Applications Software

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4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
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