NDLI: Fast 3-D thermal analysis of complex interconnect structures using electrical modeling and simulation methodologies

Content Provider	IEEE Xplore Digital Library
Author	Chuan Xu Lijun Jiang Kolluri, S.K. Rubin, B.J. Deutsch, A. Smith, H. Banerjee, K.
Copyright Year	2009
Description	Author affiliation: Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA 93106 (Chuan Xu; Kolluri, S.K.; Banerjee, K.) \|\| IBM EDA, IBM T. J. Watson Research Center, Yorktown Heights, NY (Lijun Jiang; Rubin, B.J.; Deutsch, A.) \|\| IBM EDA, Poughkeepsie, NY (Smith, H.)
Abstract	Accurate and fast estimation of VLSI interconnect thermal profiles has become critically important to estimate their impact on circuit/system performance and reliability, which is necessary for reducing product development time and achieving first-pass silicon success. Present commercial thermal analysis tools are incapable of simulating complex structures, particularly in the 3-D domain and are also difficult to integrate with existing design tools. Existing analytical thermal models are not perfect either: they are either not accurate enough or oversimplified. This paper uses a methodology, which exploits existing electrical resistance solvers for thermal simulation, to allow fast acquisition of thermal profiles of complex interconnect structures with good accuracy and reasonable computation cost. Moreover, for the first time, an accurate closed-form thermal model is developed. The model allows for an equivalent medium with effective thermal conductivity (isotropic or anisotropic) to replace the detailed material information in non-critical regions so that complex interconnect structures can be simulated. Using these techniques, this paper demonstrates the simulation of a very complex interconnect structure (~9000 objects or 15 million meshed unknowns after first order isotropic equivalent medium replacement), which is a first time achievement in the area of interconnect thermal analysis. On the other hand, it is shown that an anisotropic equivalent medium is a much better approximation of real interconnect structures from the point of view of accuracy and computation.
Starting Page	658
Ending Page	665
File Size	913571
Page Count	8
File Format	PDF
ISBN	9781605588001
ISSN	10923152
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-11-02
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Association for Computing Machinery, Inc. (ACM)
Subject Keyword	Analytical models Integrated circuit interconnections Circuit simulation Thermal resistance Computational modeling Thermal conductivity Anisotropic magnetoresistance Very large scale integration System performance Integrated circuit reliability
Content Type	Text
Resource Type	Article
Subject	Computer Graphics and Computer-Aided Design Computer Science Applications Software

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