NDLI: Variability analysis of FinFET-based devices and circuits considering electrical confinement and width quantization

Content Provider	IEEE Xplore Digital Library
Author	Rasouli, S.H. Endo, K. Banerjee, K.
Copyright Year	2009
Description	Author affiliation: Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, CA, USA (Rasouli, S.H.; Banerjee, K.) \|\| Adv. Ind. Sci. & Technol., Tsukuba, Japan (Endo, K.)
Abstract	FinFET is considered as the most likely candidate to substitute bulk CMOS technology. FinFET-based design, however, requires special attention due to its exclusive properties such as width quantization and electrical confinement (quantum-mechanical effect) even in subthreshold regime. Considering these exclusive properties of FinFETs, the sources of process variations and their effects on FinFET-based circuit characteristics can be significantly different from that in bulk CMOS devices. This paper identifies a new source of random process variation due to the gate work-function variation and resulting electrical confinement in emerging high-k/metal-gate FinFET devices. In order to capture the effect of the variations on the characteristics of multifin FinFETs (considering their width quantization property), this paper also presents a new statistical framework to accurately predict the effective threshold voltage of multifin FinFET devices. This framework is subsequently used to predict the leakage profile of FinFET-based SRAM cells. Since FinFETs are optimal for ultra-low-voltage operations due to near-ideal subthreshold swing (60 mV/dec), we focus on FinFET-based SRAM (including subthreshold SRAM) design. Contrary to the low sensitivity of the static noise margin (SNM) to the width of the pull-down devices in bulk-CMOS subthreshold SRAMs, our analysis shows, for the first time, the significant impact of employing multifin pull-down devices on the SNM of subthreshold FinFET SRAMs.
Starting Page	505
Ending Page	512
File Size	489243
Page Count	8
File Format	PDF
ISBN	9781605588001
ISSN	10923152
DOI	10.1145/1687399.1687495
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-11-02
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Association for Computing Machinery, Inc. (ACM)
Subject Keyword	Circuits Quantization FinFETs Random access memory CMOS technology Potential well CMOS process Random processes High K dielectric materials High-K gate dielectrics
Content Type	Text
Resource Type	Article
Subject	Computer Graphics and Computer-Aided Design Computer Science Applications Software

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in