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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Hua Xiong Zhiheng Huang Shan Ren Yunfei En |
| Copyright Year | 2013 |
| Description | Author affiliation: Sch. of Phys. & Eng., Sun Yat-sen Univ., Guangzhou, China (Hua Xiong; Zhiheng Huang; Shan Ren) || China Electron. Produce Reliability & Environ. Testing Res. Inst., Guangzhou, China (Yunfei En) |
| Abstract | Electromigration has a potential to be used as a process for microstructural design in ultrafine interconnects such as TSVs and microbumps. This study investigates the relationship between the electromigration and the microstructural evolution in a Cu/Sn-microbump/Cu structures through a modeling and simulation approach. The electromigration-induced polarity effect on the interfacial $Cu_{6}Sn_{5}$ and $Cu_{3}Sn$ compounds as well as the acceleration of the Cu pad consumption are found, as previously reported in experimental studies. In addition, the simulation results predict that the $Cu_{6}Sn_{5}$ grains at the anode become finer when an current is applied. The polarity effect is weaker when the pad size increases from 10 μm to 20 μm. In the larger microbump, the growth of the interfacial $Cu_{6}Sn_{5}$ is slower, while the growth of the interfacial $Cu_{3}Sn$ and the consumption of the Cu pad is faster. The growth of the interfacial IMCs and the consumption of the Cu pad at both electrodes are faster in the hourglass-shaped microbump. The interfacial $Cu_{6}Sn_{5}$ layer at the anode in the barrel-shaped microbumps appears to be convex, while concave in the hourglass-shaped microbump. The polarity effect becomes more pronounced when bulk $Cu_{6}Sn_{5}$ grains in the Sn microbump are dissolved and redeposited onto the interfacial $Cu_{6}Sn_{5}$ at the anode. The bulk $Cu_{6}Sn_{5}$ grains are predicted to migrate towards the anode driven by the electric current. |
| Sponsorship | IEEE Compon., Packag. Manuf. Technol. Soc. |
| Starting Page | 308 |
| Ending Page | 316 |
| File Size | 1410343 |
| Page Count | 9 |
| File Format | |
| ISBN | 9781479904983 |
| DOI | 10.1109/ICEPT.2013.6756478 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2013-08-11 |
| Publisher Place | China |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Electromigration Anodes Geometry Current Microstructure Tin Morphology size and geometry effects microbump electromigration microstructure phase field modeling |
| Content Type | Text |
| Resource Type | Article |
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