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Content Provider | IEEE Xplore Digital Library |
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Author | Yongsoo Joo Dimin Niu Xiangyu Dong Guangyu Sun Naehyuck Chang Yuan Xie |
Copyright Year | 2010 |
Description | Author affiliation: Department of Electrical Engineering and Computer Science, Seoul National University, Korea (Naehyuck Chang) || Department of Computer Science and Engineering, Pennsylvania State University, University Park, 16802, USA (Yongsoo Joo; Dimin Niu; Xiangyu Dong; Guangyu Sun; Yuan Xie) |
Abstract | Phase change memory (PCM) is one of the most promising technology among emerging non-volatile random access memory technologies. Implementing a cache memory using PCM provides many benefits such as high density, non-volatility, low leakage power, and high immunity to soft error. However, its disadvantages such as high write latency, high write energy, and limited write endurance prevent it from being used as a drop-in replacement of an SRAM cache. In this paper, we study a set of techniques to design an energy- and endurance-aware PCM cache. We also modeled the timing, energy, endurance, and area of PCM caches and integrated them into a PCM cache simulator to evaluate the techniques. Experiments show that our PCM cache design can achieve 8% of energy saving and 3.8 years of lifetime compared with a baseline PCM cache having less than a hour of lifetime. |
Starting Page | 136 |
Ending Page | 141 |
File Size | 617790 |
Page Count | 6 |
File Format | |
ISBN | 9781424470549 |
ISSN | 15301591 |
e-ISBN | 9783981080162 |
Language | English |
Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher Date | 2010-03-08 |
Publisher Place | Germany |
Access Restriction | Subscribed |
Rights Holder | European Design Automation Association (EDAA) |
Subject Keyword | Phase change memory Phase change materials Random access memory Cache memory Nonvolatile memory Energy consumption Timing Germanium alloys Crystallization Delay |
Content Type | Text |
Resource Type | Article |
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