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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Yiran Chen Hai Li Xiaobin Wang Wenzhong Zhu Wei Xu Tong Zhang |
| Copyright Year | 2010 |
| Description | Author affiliation: ECE Department, PolyTech Institute of NYU, Brooklyn, NY, USA (Hai Li) || ECSE Department, Rensselaer Polytechnic Institute, Troy, New York, USA (Wei Xu; Tong Zhang) || Seagate Technology, Bloomington, MN, USA (Yiran Chen; Xiaobin Wang; Wenzhong Zhu) |
| Abstract | We proposed a novel self-reference sensing scheme for Spin-Transfer Torque Random Access Memory (STT-RAM) to overcome the large bit-to-bit variation of Magnetic Tunneling Junction (MTJ) resistance. Different from all the existing schemes, our solution is nondestructive: The stored value in the STT-RAM cell does NOT need to be overwritten by a reference value. And hence, long write-back operation (of the original stored value) is eliminated. The robustness analyses of the existing scheme and our proposed nondestructive scheme are also presented. The measurement results from a 16kb testing chip successfully confirmed the effectiveness of our technique. |
| Starting Page | 148 |
| Ending Page | 153 |
| File Size | 544912 |
| Page Count | 6 |
| File Format | |
| ISBN | 9781424470549 |
| ISSN | 15301591 |
| e-ISBN | 9783981080162 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2010-03-08 |
| Publisher Place | Germany |
| Access Restriction | Subscribed |
| Rights Holder | European Design Automation Association (EDAA) |
| Subject Keyword | Torque Random access memory Magnetic tunneling Robustness Nonvolatile memory Magnetic switching Magnetic fields Magnetization Electric resistance Delay self-reference spin-transfer torque STT-RAM |
| Content Type | Text |
| Resource Type | Article |
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