NDLI: Comparative study of low-temperature PECVD Of amorphous silicon using mono-, di-, trisilane and cyclohexasilane

Content Provider	IEEE Xplore Digital Library
Author	Pokhodnya, K. Sandstrom, J. Olson, C. Xuliang Dai Boudjouk, P.R. Schulz, D.L.
Copyright Year	2009
Description	Author affiliation: Center for Nanoscale Science and Engineering, North Dakota State University, Fargo, 58108 USA (Pokhodnya, K.; Sandstrom, J.; Olson, C.; Xuliang Dai; Boudjouk, P.R.; Schulz, D.L.)
Abstract	The hydrogenated amorphous silicon a-Si∶H films were grown by plasma-enhanced chemical vapor deposition (PECVD) using liquid cyclohexasilane Si (CHS). The growth rate of a-Si∶H was studied as a function of substrate temperatures in the range of 30 °C≪T≪450 °C using deposition conditions that were optimized for monosilane SiH. The same parameters were used for a- Si∶H films grown using disilane (Si) and trisilane (Si) precursors. It was found that the a-Si∶H film growth rate of CHS is lower with respect to those of mono-, di- and trisilane in an Ar plasma. Addition of ∼10% of H dramatically increases the deposition rate for CHS-based films about 700% to 8 Å/sec. The as-deposited films were characterized by FTIR and Raman spectroscopy to probe the hydrogen content and local bonding environment. It was found that the films grown using Ar/H mixtures as carrier gas have a reduced hydrogen content relative to polysilane fragments indicating higher quality amorphous silicon.
Starting Page	001758
Ending Page	001760
File Size	2975125
Page Count	3
File Format	PDF
ISBN	9781424429493
ISSN	01608371
DOI	10.1109/PVSC.2009.5411459
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-06-07
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Amorphous silicon Semiconductor films Plasma temperature Argon Hydrogen Plasma chemistry Chemical vapor deposition Substrates Temperature distribution Raman scattering
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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