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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Xiao, Y.G. Uehara, K. Lestrade, M. Li, Z.Q. Li, Z.M.S. |
| Copyright Year | 2009 |
| Description | Author affiliation: Crosslight Software Inc., 121-3989 Henning Drive, Burnaby, BC, V5C 6P8, Canada (Xiao, Y.G.; Lestrade, M.; Li, Z.Q.; Li, Z.M.S.) || Crosslight Software Japan, 4F Bell First, 33-1 Shinden-cho Chuo-ku Chiba city 260-0027, Japan (Uehara, K.) |
| Abstract | Based on Crosslight APSYS, amorphous Si (a-Si∶H)/amorphous SiGe∶H (a-SiGe∶H)/microcrystalline (Δc-Si) thin film triple junction solar cells are modeled. Basic physical quantities like band diagrams, optical absorption and generation are obtained. Quantum efficiency and I-V curves for individual junctions are presented for current matching analyses. The whole TJ cell I-V curves are also presented and the results are discussed with respect to the top surface ZnO∶Al TCO layer affinity. The interface texture effect is modeled with FDTD (finite difference time domain) module and results for top junction are presented. The modeling results give possible clues to achieve high efficiency for TJ thin film solar cells. |
| Starting Page | 002154 |
| Ending Page | 002158 |
| File Size | 8771747 |
| Page Count | 5 |
| File Format | |
| ISBN | 9781424429493 |
| ISSN | 01608371 |
| DOI | 10.1109/PVSC.2009.5411414 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-06-07 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Transistors Photovoltaic cells Optical films Finite difference methods Amorphous materials Semiconductor thin films Solar power generation Absorption Semiconductor materials Quantum dots |
| Content Type | Text |
| Resource Type | Article |
| Subject | Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering |
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