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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Law, D.C. Bhusari, D.M. Mesropian, S. Boisvert, J.C. Hong, W.D. Boca, A. Larrabee, D.C. Fetzer, C.M. King, R.R. Karam, N.H. |
| Copyright Year | 2009 |
| Description | Author affiliation: Boeing - Spectrolab, Inc., 12500 Gladstone Ave., Sylmar, CA 91342 USA (Law, D.C.; Bhusari, D.M.; Mesropian, S.; Boisvert, J.C.; Hong, W.D.; Boca, A.; Larrabee, D.C.; Fetzer, C.M.; King, R.R.; Karam, N.H.) |
| Abstract | Boeing-Spectrolab recently demonstrated monolithic 5-junction space solar cells using direct semiconductor-bonding technique. The direct-bonded 5-junction cells consist of (Al)GaInP, AlGa(In)As, Ga(In)As, GaInPAs, and GaIn(P)As subcells deposited on GaAs or Ge and InP substrates. Large-area, high-mechanical strength, and low-electrical resistance direct-bonded interface was achieved to support the high-efficiency solar cell structure. Preliminary 1-sun AM0 testing of the 5-junction cells showed encouraging results. One of the direct-bonded solar cell achieved an open-circuit-voltage of 4.7V, a short-circuit current-density of 11.7 $mA/cm^{2},$ a fill factor of 0.79, and an efficiency of 31.7%. Spectral response measurement of the five-junction cell revealed excellent external quantum efficiency performance for each subcell and across the direct-bonded interface. Improvements in crystal growth and current density allocation among subcells can further raise the 1-sun, AM0 conversion efficiency of the direct-bonded 5-junction cell to 35 – 40%. |
| Starting Page | 002237 |
| Ending Page | 002239 |
| File Size | 669561 |
| Page Count | 3 |
| File Format | |
| ISBN | 9781424429493 |
| ISSN | 01608371 |
| DOI | 10.1109/PVSC.2009.5411375 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-06-07 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Photovoltaic cells III-V semiconductor materials Substrates Space technology Gallium arsenide Current density Photonic band gap Wafer bonding Indium phosphide Circuit testing |
| Content Type | Text |
| Resource Type | Article |
| Subject | Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering |
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