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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Rath, J.K. Brinza, M. Schropp, R.E.I. |
| Copyright Year | 2009 |
| Description | Author affiliation: Utrecht University, Faculty of Science, Debye Institute for Nanomaterial Science, Nanophotonics - Physics of Devices, P.O. Box 80000, 3508 TA, the Netherlands (Rath, J.K.; Brinza, M.; Schropp, R.E.I.) |
| Abstract | Fabrication of solar cells on cheap plastics, due to its demand for a low temperature processing (∼100 °C) needs adaptation of the cell structure of the state-of-the-art high efficiency thin film silicon solar cells made at high temperature (200 °C). Use of a double n-layer (n-µc-Si/n-a-Si) instead of a single n-µc-Si layer improves V from a low 0.66V to 0.82V in the as deposited state of an n-i-p type a-Si cell made at 100 °C. In a high temperature deposited cell, where a p-type µc-Si (band gap E =1.1 eV) is used in combination with a-Si i-layer (E =1.8 eV), a thin buffer a-Si layer made at 100 °C acts as a barrier for electron back diffusion from the i-layer. For the low temperature deposited i-layers this type of buffer layer loses its advantage of band offset and fails to stop the electron back diffusion. To verify this hypothesis, a-Si n-i-p cells were made with a heavily doped amorphous silicon p-layer at high hydrogen dilution (leaving out the ineffective buffer layer). We obtained indeed a high V of 0.89 V in as deposited state and after annealing at 100 °C the V reached 0.92 V. An efficiency of 6.6% was obtained for a cell made on a flat Ag/ZnO:Al back reflector (BR) on a glass substrate. A low current density of 12.5 $mA/cm^{2}$ is attributed to the fact that it was a smooth BR. The high V of 0.92V was reproduced in a similar cell on stainless steel foil substrate. Cells with similar structure and deposition condition were fabricated on plastic substrates, namely polyethylene naphthalene (.PEN) and polyethylene terpthalate (PET). Deposition conditions of ZnO:Al by magnetron sputtering were adapted to reduce the deposition related stress on the plastic foil while the Ag layer was thermally evaporated. A comparable V of 0.89 V is obtained in as deposited state and 0.92 V after annealing. The cells on PEN and PET showed initial efficiencies of 6.3% and 5.9% respectively. |
| Starting Page | 001196 |
| Ending Page | 001199 |
| File Size | 3782524 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424429493 |
| ISSN | 01608371 |
| DOI | 10.1109/PVSC.2009.5411232 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-06-07 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Amorphous silicon Photovoltaic cells Plastics Temperature Electrons Buffer layers Annealing Polyethylene Positron emission tomography Thermal stresses |
| Content Type | Text |
| Resource Type | Article |
| Subject | Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering |
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