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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Chey, S.J. Wei Liu Min Yuan Mitzi, D.B. |
| Copyright Year | 2009 |
| Description | Author affiliation: IBM T. J. Watson Research Center, P. O. Box 218, Yorktown Heights, NY 10598, USA (Chey, S.J.; Wei Liu; Min Yuan; Mitzi, D.B.) |
| Abstract | Thin film properties (resistivity, sheet resistance, optical transmissivity, stability testing under RH85/85C conditions and film stress) were measured for indium tin oxide (ITO) and Al-doped Zinc Oxide (ZnO) (2 wt.% Al doped target) films deposited using a confocal RF magnetron sputtering system. A comparison was made between sample biasing and high temperature conditions with respect to these properties. The sample bias was applied by RF power (0 – 60 W) to the sample. For the high temperature runs, the samples were heated to temperatures of as high as 250 C. ITO was deposited with argon as the process gas; Al-ZnO was deposited with a small amount of hydrogen (from 0 to 1%) added to argon. We find that comparable qualities of films can be obtained by either sample biasing or high temperature processes for ITO and Al-ZnO in terms of sheet resistance and transmission. However, sample biasing resulted in significantly higher compressive stress. The sheet resistance of Al-ZnO was affected by addition of hydrogen. The optimal concentration of hydrogen was 0.33% for sample biasing and 0.5% for high temperature runs under the deposition conditions considered. |
| Starting Page | 001149 |
| Ending Page | 001153 |
| File Size | 1141430 |
| Page Count | 5 |
| File Format | |
| ISBN | 9781424429493 |
| ISSN | 01608371 |
| DOI | 10.1109/PVSC.2009.5411222 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-06-07 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Sputtering Indium tin oxide Zinc oxide Radio frequency Temperature Optical films Hydrogen Argon Magnetic properties Conductivity |
| Content Type | Text |
| Resource Type | Article |
| Subject | Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering |
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