NDLI: Control of V in CdSe solar cells

Content Provider	IEEE Xplore Digital Library
Author	Chanda, S. Anders, R. Ferekides, C.S. Morel, D.L.
Copyright Year	2009
Description	Author affiliation: Department of Electrical Engineering, Clean Energy Research Center, University of South Florida, Tampa, USA (Chanda, S.; Anders, R.; Ferekides, C.S.; Morel, D.L.)
Abstract	Simulations indicate that efficiencies in the 25 – 30% range can be attained with CdSe/CIGS tandem cells. A key to meeting this objective is attaining Voc's in excess of 1 volt in the CdSe cell. The p window layer for CdSe is a member of the ZnSe family of compounds which have the requisite band structure. To be effective, the p window contact must have effective contact energy of order six eV. Progress has been made toward achieving this energy but is stymied by difficulties in effectively doping the layer. In this paper we report new insights into the operable contact mechanism for the p window layer. While an apparent doping level of order $1020/cm^{3}$ can be attained for ZnTe:Cu, needed tunneling contact to this layer cannot be attained. Comparisons of experimental results with simulations also indicate that the expected electron barrier due to the CdSe/ZnSe conduction band offset is not operative. We use these results to propose a new model for the contact that results in consistency between simulation and experiment. This new insight is expected to expedite the further advancement of Voc in CdSe to enable the attainment of the tandem efficiency indicated above.
Starting Page	001507
Ending Page	001512
File Size	716267
Page Count	6
File Format	PDF
ISBN	9781424429493
ISSN	01608371
DOI	10.1109/PVSC.2009.5411344
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-06-07
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Doping Transistors Photonic band gap Electrons Manufacturing Costs Electrodes Crystalline materials Optical materials Photovoltaic cells
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

Sl.	Authority	Responsibilities	Communication Details
1	Ministry of Education (GoI), Department of Higher Education	Sanctioning Authority	https://www.education.gov.in/ict-initiatives
2	Indian Institute of Technology Kharagpur	Host Institute of the Project: The host institute of the project is responsible for providing infrastructure support and hosting the project	https://www.iitkgp.ac.in
3	National Digital Library of India Office, Indian Institute of Technology Kharagpur	The administrative and infrastructural headquarters of the project	Dr. B. Sutradhar bsutra@ndl.gov.in
4	Project PI / Joint PI	Principal Investigator and Joint Principal Investigators of the project	Dr. B. Sutradhar bsutra@ndl.gov.in Prof. Saswat Chakrabarti will be added soon
5	Website/Portal (Helpdesk)	Queries regarding NDLI and its services	support@ndl.gov.in
6	Contents and Copyright Issues	Queries related to content curation and copyright issues	content@ndl.gov.in
7	National Digital Library of India Club (NDLI Club)	Queries related to NDLI Club formation, support, user awareness program, seminar/symposium, collaboration, social media, promotion, and outreach	clubsupport@ndl.gov.in
8	Digital Preservation Centre (DPC)	Assistance with digitizing and archiving copyright-free printed books	dpc@ndl.gov.in
9	IDR Setup or Support	Queries related to establishment and support of Institutional Digital Repository (IDR) and IDR workshops	idr@ndl.gov.in