NDLI: Two dimensional numerical modeling of a silicon solar cell with deep contacts in the emitter

Content Provider	IEEE Xplore Digital Library
Author	Rapolu, K. Singh, P. Shea, S.P.
Copyright Year	2009
Description	Author affiliation: Suniva Inc., Norcross, GA, USA (Shea, S.P.) \|\| Department of Electrical and Computer Engineering, Villanova University, PA 19085, USA (Rapolu, K.; Singh, P.)
Abstract	The influence of front contacts deep into the emitter region on the performance of a Si solar cell was calculated on the basis of a 2-D numerical modeling of an n-p crystalline silicon solar cell. The emitter is n-type doped with a Gaussian profile. The base is p-type uniformly doped. The carrier flow pattern in the solar cell was analyzed by solving the diffusion equations using appropriate boundary conditions. The numerical model was developed in COMSOL by solving the Poisson equation; the current density equation and the continuity equation in both the regions. The numerical model was verified with the PC1D model by covering the whole front emitter surface with a transparent contact. The model after verification was used to determine the effects of the size and depth of the front contacts in the emitter region on the short circuit current and open circuit voltage of the solar cell. The results indicated a reduction in the open circuit voltage with increase in depth of the contact into the emitter region, as expected. This new model can be used a tool for understanding and optimizing the interaction of the front contacts with the emitter region.
Starting Page	001048
Ending Page	001053
File Size	920911
Page Count	6
File Format	PDF
ISBN	9781424429493
ISSN	01608371
DOI	10.1109/PVSC.2009.5411201
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-06-07
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Numerical models Silicon Photovoltaic cells Poisson equations Circuits Voltage Crystallization Pattern analysis Boundary conditions Current density
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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