NDLI: Sulfur hexafluoride (SF) as fluorine dopant precursor for production of fluorine doped tin oxide films by MOCVD

Content Provider	IEEE Xplore Digital Library
Author	Wyse, C. Torres, R. Barnes, T. Scott, M. Young, M. Xiaonan Li Gessert, T.
Copyright Year	2009
Description	Author affiliation: Matheson Tri-Gas, Longmont, CO 80501, USA (Wyse, C.; Torres, R.) \|\| National Renewable Energy Laboratory, Golden, CO 80401, USA (Barnes, T.; Scott, M.; Young, M.; Xiaonan Li; Gessert, T.)
Abstract	SF was investigated as an alternative F source for preparing fluorine doped tin oxide films (SnO:F). SnO:F films were prepared on glass by low pressure MOCVD using tetramethyltin (Sn(CH) and O with SF between 500°C and 650°C and 10–65 mol% SF. These were compared to un-doped SnO and SnO:F grown with CBrF. SF required higher thermal activation than CBrF. High electron mobility (∼40 $cm^{2}/V-s)$ and low resistance $(6.5×10^{−3}$ Ω-cm) were achieved with SF at ≫600°C. at 550°C and below, mobility was on the order of 4 $cm^{2}/V-s.$ Carrier concentrations were on the order of $10^{19}$ $cm^{−3},$ compared to $10^{20}$ $cm^{−3}$ for CBrF doped films. Optical transmission, reflectance and absorption spectra demonstrated transmittance of 80% in the visible spectrum. XRD showed SF generated films of different crystal structure than CBrF. SIMS Showed a uniform F concentration of $1.5×10^{19}$ $atom/cm^{3}$ from SF, but SF did not incorporate as much F into the films as CBrF (7.5×1020 $atoms/cm^{3}).$ Sulfur contamination was not found.
Starting Page	002435
Ending Page	002438
File Size	9011097
Page Count	4
File Format	PDF
ISBN	9781424429493
ISSN	01608371
DOI	10.1109/PVSC.2009.5411291
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-06-07
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Sulfur hexafluoride Optical films Tin Glass MOCVD Electron mobility Atom optics Reflectivity Electromagnetic wave absorption X-ray scattering
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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