NDLI: All-side SiNx passivated mc-Si solar cells evaluated with respect to parasitic shunting

Content Provider	IEEE Xplore Digital Library
Author	Cesar, I. Bende, E. Galbiati, G. Janssen, L. Weeber, A. Bultman, J.H.
Copyright Year	2009
Description	Author affiliation: ECN Solar Energy, P.O. Box 1, 1755 ZG Petten, The Netherlands (Cesar, I.; Bende, E.; Galbiati, G.; Weeber, A.; Bultman, J.H.) \|\| Solland Solar Cells BV, Bohr 10, NL 6422 RL Heerlen, The Netherlands (Janssen, L.)
Abstract	In search of solar cell concepts that allow processing thinner wafers (≪150 micron), the conventional full Al rear side is replaced by an open rear metallization combined with a dielectric passivation layer. We show a gain of 2.1% (relative) in the product of Jsc×Voc, when we apply a passivated SiNx dielectric layer and local Al contacts on the rear of p-type mc-Si solar cells instead of a full Al-BSF. To achieve this gain, metallization designs of H-patterns and point-contacts were used with a rear coverage less than 8%. The gain in Jsc×Voc is an improvement over our previously reported results for open rear side cells with rear coverage of 14%. In addition, we propose a new method to quantify parasitic shunting to evaluate the efficiency potential of this cell concept. Experimental evidence shows that the parasitic shunting is one of the main limiting factors and the new method predicts a gain in Jsc and Voc in absence of this phenomenon. Omitting additional resistive losses of the open rear side cell compared to its full-coverage counterpart, we predict a gain in efficiency of about 0.6% absolute if parasitic shunting could be eliminated
Starting Page	001386
Ending Page	001391
File Size	834394
Page Count	6
File Format	PDF
ISBN	9781424429493
ISSN	01608371
DOI	10.1109/PVSC.2009.5411292
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2009-06-07
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photovoltaic cells Passivation Metallization Chemicals Dielectric losses Aluminum oxide Silicon Solar energy Electrons P-n junctions
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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