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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Stoddard, N. Sidhu, R. Creager, J. Dey, S. Kinsey, B. Maisano, L. Phillips, C. Clark, R. Zahler, J. XianQing Xie Tingbin Wu Qingtang Jiang |
| Copyright Year | 2009 |
| Description | Author affiliation: JA Solar, Yangzhou, Jiangsu Province, 225131, China (XianQing Xie; Tingbin Wu; Qingtang Jiang) || BP Solar, Frederick, MD, 21703, USA (Stoddard, N.; Sidhu, R.; Creager, J.; Dey, S.; Kinsey, B.; Maisano, L.; Phillips, C.; Clark, R.; Zahler, J.) |
| Abstract | Single crystal Silicon has been produced using a cast-in-place process usually used for multicrystalline ingot production. This Mono2 ™ material produces higher cell efficiencies compared to multi crystalline Silicon material with the same average minority carrier lifetime. Profiles of lifetime through the height of the brick and across the ingot demonstrate rough equivalency in bulk lifetime between Mono2 ™ and multi material. However, the standard deviation of lifetime in wafers is smaller for the Mono2 ™ material. This quality difference accounts for about half of the potential efficiency gain in Mono2 ™ material, while the rest of the gain, primarily in J, is derived from the ability to form pyramidal light trapping texture on the (100) surface. Minority carrier lifetime data is compared with cell electrical data from the same collection of ingot positions. Open circuit voltage and short circuit current correlate well to some degree with bulk lifetime, while fill factor is independent both of bulk lifetime and position in the ingot. |
| Starting Page | 001163 |
| Ending Page | 001168 |
| File Size | 9233463 |
| Page Count | 6 |
| File Format | |
| ISBN | 9781424429493 |
| ISSN | 01608371 |
| DOI | 10.1109/PVSC.2009.5411225 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2009-06-07 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | MONOS devices Silicon Crystalline materials Charge carrier lifetime Costs Crystallization Etching Surface texture Microwave measurements Production |
| Content Type | Text |
| Resource Type | Article |
| Subject | Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering |
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