NDLI: Optimization of Si:H multijunction n-i-p solar cells through the development of deposition phase diagrams

Content Provider	IEEE Xplore Digital Library
Author	Stoke, J.A. Dahal, L.R. Jian Li, Podraza, N.J. Xinmin Cao, Deng, X. Collins, R.W.
Copyright Year	2008
Description	Author affiliation: Center for Photovoltaics Innovation and Commercialization, University of Toledo, OH 43606, USA (Stoke, J.A.; Dahal, L.R.; Jian Li,; Podraza, N.J.; Xinmin Cao,; Deng, X.; Collins, R.W.)
Abstract	Phase diagrams have been developed to guide very high frequency (vhf) plasma-enhanced chemical vapor deposition (PECVD) of intrinsic hydrogenated amorphous silicon (a-Si:H), amorphous silicon-germanium alloys (a-Si:H), and nanocrystalline silicon (nc-Si:H) for use as the top, middle, and bottom cell i-layer components, respectively, of triple junction n-i-p solar cells. These phase diagrams have been used in conjunction with cross-sectional transmission electron microscopy (XTEM) to identify nucleation and growth behavior in order to gain a better understanding of phase evolution. The substrates for phase diagram development by real time spectroscopic ellipsometry (RTSE) are crystalline Si wafers that have been over-deposited with either n-type a-Si:H for the top and middle cell amorphous i-layers, or n-type nc-Si:H for the bottom cell nanocrystalline i-layer. Identical n/i cell structures were co-deposited on textured (stainless steel)/Ag/ZnO, which serve as substrate/back-reflectors, in order to relate the RTSE-developed phase diagrams to the performance parameters of single-junction solar cells. This study has reaffirmed that the highest efficiencies for a-Si:H and a-Si:H solar cells are obtained when the i-layers are prepared under previously-described maximal H dilution conditions. The phase diagram for the bottom cell using a nc-Si:H n-layer reveals for the first time a bifurcation at a critical R value between mixed-toamorphous phase transitions [(a+nc) → a] at low R and mixed-to-single phase nanocrystalline transitions at high R [(a+nc) → nc]. The highest efficiency single-step nc-Si:H solar cell is obtained at minimal R while remaining on the nanocrystalline side of the identified bifurcation where suitable grain boundary passivation is assured.
Starting Page	1
Ending Page	6
File Size	4470002
Page Count	6
File Format	PDF
ISBN	9781424416400
ISSN	01608371
DOI	10.1109/PVSC.2008.4922762
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-05-11
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photovoltaic cells Amorphous materials Bifurcation Frequency Plasma chemistry Chemical vapor deposition Amorphous silicon Germanium silicon alloys Silicon germanium Germanium alloys
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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