NDLI: Impact of annealing on passivation of a-Si:H / c-Si heterostructures

Content Provider	IEEE Xplore Digital Library
Author	De Wolf, Stefaan Fujiwara, Hiroyuki Kondo, Michio
Copyright Year	2008
Description	Author affiliation: Research Center for Photovoltaics, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan (De Wolf, Stefaan; Fujiwara, Hiroyuki; Kondo, Michio)
Abstract	The a-Si:H / c-Si heterostructure, is an attractive solution to avoid the presence of highly recombinative metal contacts at the surfaces of c-Si based solar cells. To assure good interface passivation, insertion of a sandwiched thin device-grade intrinsic a-Si:H(i) film is recommended between substrate and doped a-Si:H layer. In this article we discuss our findings on the impact of low-temperature post-deposition annealing on the passivation properties of such stacks: we have identified two fundamentally different recombination mechanisms that may critically affect heterostructure device performance. Firstly, for the intrinsic buffer layer, whereas abrupt a-Si:H / c-Si interfaces typically benefit from post deposition annealing, it is shown that this is not true when epitaxially grown Si material is present at the interface. Secondly, in case the buffer layer is covered with a doped a-Si:H overlayer, annealing may again be detrimental for the interface passivation. The latter is linked to the fact that the presence of such doped layer may lower the energy required for Fermi-level dependent Si-H bond rupture in the underlying intrinsic buffer layer, resulting in enhanced interface recombination.
Starting Page	1
Ending Page	4
File Size	1061689
Page Count	4
File Format	PDF
ISBN	9781424416400
ISSN	01608371
DOI	10.1109/PVSC.2008.4922851
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-05-11
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Annealing Passivation Surface cleaning Photovoltaic cells Substrates Buffer layers Rough surfaces Surface roughness Plasma temperature Material properties
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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