NDLI: Effect of target materials on structural and electrical properties of unhydrogenated amorphous silicon thin films deposited by RF magnetron sputtering

Content Provider	IEEE Xplore Digital Library
Author	Paul, S. Chatterjee, S. Yiqiang Chen, Dutta, P. Bommisetty, V. Galipeau, D.
Copyright Year	2008
Description	Author affiliation: Department of Electrical Engineering and Computer Science, South Dakota State University, Brookings, 57007, USA (Paul, S.; Chatterjee, S.; Yiqiang Chen,; Dutta, P.; Bommisetty, V.; Galipeau, D.)
Abstract	The effect of target materials (single crystalline silicon (c-Si), polycrystalline silicon (p-Si)) and substrate temperatures on structural and electrical properties of a-Si thin films deposited on glass substrate by RF magnetron sputtering have been investigated. The purpose of this work was to find out the cost-effective materials for intrinsic layer in inorganic solar cell device. X-ray diffraction patterns of both sets of a-Si films showed similar broad hump indicating amorphous nature of thin film materials. AFM topographs indicated no target phase dependency on grain size (50–60 nm) and surface roughness (∼ 10 nm). Optical band gap values of all deposited films were calculated using Tauc's plot from UV-Vis spectra, have values within the range 1.88 eV to 1.98 eV. In activation energy (E) study even in purely intrinsic phase dual activation energies in dark conductivity have been reported corresponding to high temperature (E $^{High})$ and low temperature (E $^{Low})$ regime. It is observed that $E^{Low}$ was always lower in magnitude than $E^{High}.$ The $E^{High}$ originates due to dominant transport through the extended states (E) at relatively higher temperature while at lower temperature, the extended state transport appears less feasible and the transport is dominated by the carrier hopping from one localized state to an empty localized state and carrier hopping from a localized (defect) state to an empty extended state. The values of activation energy in high temperature region $(E^{High}$ for T ≫ 400 K) of a-Si samples were independent of sputter target used. The $E^{High}$ value for samples deposited at RT was 0.59 eV and for sample deposited at 200°C was 0.58 eV. At high temperature regime electrical band gap from activation energy data for all deposited thin film material ∼ 1.2 –1.4 eV observed.
Starting Page	1
Ending Page	4
File Size	4131088
Page Count	4
File Format	PDF
ISBN	9781424416400
ISSN	01608371
DOI	10.1109/PVSC.2008.4922813
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-05-11
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Amorphous magnetic materials Magnetic materials Sputtering Magnetic properties Amorphous silicon Semiconductor thin films Radio frequency Temperature Crystalline materials Optical films
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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