NDLI: Removal of hydrogen and deposition of surface charge during rapid thermal annealing

Content Provider	IEEE Xplore Digital Library
Author	Kho, Teng C. McIntosh, Keith R. Tan, Jason T. Thomson, Andrew F. Chen, Florence W.
Copyright Year	2008
Description	Author affiliation: Centre for Sustainable Energy Systems, Australian National University, Canberra, ACT 0200, AUSTRALIA (Kho, Teng C.; McIntosh, Keith R.; Thomson, Andrew F.) \|\| School of Photovoltaic and Renewable Energy Engineering, University of New South Wales, 2052, AUSTRALIA (Chen, Florence W.) \|\| Department of Engineering, Australian National University, Canberra, ACT 0200, AUSTRALIA (Tan, Jason T.)
Abstract	The submission of a hydrogenated oxide-passivated silicon wafer to a rapid thermal anneal (RTA) leads to a complicated change in effective lifetime τ. Within seconds, τ decreases rapidly before increasing to near its initial level, and then decreasing more slowly. The initial decline is shown to be due to hydrogen loss from the SiO—Si interface, as is consistent with the literature. The recovery in τ is due to the deposition of surface charge, somehow related to the placement of the sample on an as-cut silicon baseplate within the RTA chamber; this surface charge can be removed by washing the sample in isopropanol. The mechanism behind the final decrease in lifetime is unknown.
Starting Page	1
Ending Page	5
File Size	7588343
Page Count	5
File Format	PDF
ISBN	9781424416400
ISSN	01608371
DOI	10.1109/PVSC.2008.4922678
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-05-11
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Hydrogen Rapid thermal annealing Silicon Australia Temperature dependence Thermal engineering Power engineering and energy Photovoltaic systems Solar power generation Renewable energy resources
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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