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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Sheoran, Manav Kim, Dong Seop Rohatgi, Ajeet Dekkers, H.F.W. Beaucarne, G. Young, Matthew Asher, Sally |
| Copyright Year | 2008 |
| Description | Author affiliation: University Center of Excellence for Photovoltaics Research and Education, School of Electrical and Computer, Engineering, Georgia Institute of Technology, Atlanta, 30332, U.S.A (Sheoran, Manav; Kim, Dong Seop; Rohatgi, Ajeet) || National Renewable Energy Laboratory, Golden, Colorado 80401, U.S.A (Young, Matthew; Asher, Sally) || IMEC vzw. Kapeldreef 75, 3001 Leuven, Belgium (Dekkers, H.F.W.; Beaucarne, G.) |
| Abstract | Hydrogen (H) released during the annealing of hydrogenated amorphous silicon nitride (SiN:H) films diffuses through the crystalline silicon and passivates the defects. This study shows that the stable H isotope deuterium (D), which is released during the annealing of deuterated amorphous silicon nitride (SiN:D) films, diffuses through the crystalline silicon and is subsequently captured by a thin, highly defective amorphous layer of silicon (a-Si) sputtered on the rear surface. We report on the measurement of the concentration of “penetrated” deuterium (hydrogen), by secondary ion mass spectrometry (SIMS) to monitor the flux of D diffusing through a defect-free single-crystalline silicon wafer. The penetrated D content in the trapping layer increases with the annealing time. However, the flux of D injected into the silicon from the SiNx layer decreases as annealing time increases. At an annealing temperature of 750 °C, D was found to penetrate through a 575 μm thick wafer in as little as 1 second peak annealing time in a Rapid Thermal Processing (RTP) system. Lifetime measurements on defective Si show that higher flux of H during the short RTP anneal is crucial for enhanced hydrogenation of the defects in Si. |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 1904419 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424416400 |
| ISSN | 01608371 |
| DOI | 10.1109/PVSC.2008.4922638 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2008-05-11 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Hydrogen Rapid thermal annealing Amorphous silicon Silicon compounds Semiconductor films Crystallization Deuterium Isotopes Amorphous materials Mass spectroscopy |
| Content Type | Text |
| Resource Type | Article |
| Subject | Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering |
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