NDLI: Resonance Ultrasonic Vibrations for in-line crack detection in silicon wafers and solar cells

Content Provider	IEEE Xplore Digital Library
Author	Monastyrskyi, A. Ostapenko, S. Polupan, O. Maeckel, H. Vazquez, M.
Copyright Year	2008
Description	Author affiliation: Isofoton S.A., 29590 Campanillas-Malaga, Spain (Maeckel, H.; Vazquez, M.) \|\| University of South Florida, Nanomaterials and Nanomanufacturing Research Center, Tampa, 33620, U.S.A. (Monastyrskyi, A.; Ostapenko, S.; Polupan, O.)
Abstract	The Resonance Ultrasonic Vibrations (RUV) technique was developed for in-line non-destructive crack detection in full-size silicon wafers and solar cells. The RUV methodology relies on deviation of the resonance frequency response curve measured on a wafer with peripheral or bulk millimeter-length crack and on identical non-cracked wafers. Three RUV frequency curve crack detection criteria were identified: (1) shift of the peak position; (2) increase of the bandwidth, and (3) reduction of the amplitude. It was observed that statistical variations of the RUV parameters on a similarly processed silicon wafers/cells with the same geometry lead to “false positive” events reducing accuracy of the RUV method. We proposed a simple statistical approach using three independent RUV crack detection criteria to resolve this issue and demonstrated its validity experimentally. Crack detection using RUV technique was applied to a set of production-grade Cz-Si wafers and finished solar cells from the Isofoton's production line. Cracked solar cells rejected by the RUV method using the statistical approach were imaged with Scanning Acoustic Microscopy (SAM) and room-temperature photoluminescence (PL) mapping. A comparison of three independent techniques for crack detection, RUV, SAM and PL, was performed on selected samples. A high accuracy and selectivity of the RUV method to identify mm-size cracks in wafers and cells was confirmed.
Starting Page	1
Ending Page	6
File Size	6413592
Page Count	6
File Format	PDF
ISBN	9781424416400
ISSN	01608371
DOI	10.1109/PVSC.2008.4922742
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-05-11
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Resonance Silicon Photovoltaic cells Acoustic signal detection Frequency response Frequency measurement Ultrasonic variables measurement Bandwidth Geometry Production
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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