NDLI: Improvement of epitaxial crystalline silicon thin-film solar cells at Fraunhofer ISE

Content Provider	IEEE Xplore Digital Library
Author	Schmich, E. Lindekugel, S. Reber, S.
Copyright Year	2008
Description	Author affiliation: Fraunhofer Institute for Solar Energy Systems, Heidenhofstr. 2, D-79110 Freiburg, Germany (Schmich, E.; Lindekugel, S.; Reber, S.)
Abstract	Due to the increased costs of silicon feedstock, the interest in silicon thin-film solar cells has been intensified in the last years. The aim of this paper is to present improvements to the epitaxial crystalline silicon thin-film solar cells concept that have been achieved at Fraunhofer ISE. Within the thin-film technologies, our approach is based on the concept of an epitaxial wafer-equivalent. It consists of a crystalline silicon thin-film on a highly doped silicon substrate, which can then be processed using a “standard” wafer cell process. Simple process optimisation has been carried out, focusing on the epitaxial back surface field, the base thickness and an enhanced doping profile. Simulation results were confirmed experimentally. A simplification of the solar cell process by growing the emitter in-situ after the base deposition is investigated. Efficiencies up to 14.9% with open circuit voltages up to 655 mV were reached with base thicknesses below 20 μm. However, to further improve the performance a front side texture has to be implemented. Initial results show that plasma etching of a thick epitaxial emitter creates shunts. Remote plasma hydrogen passivation (RPHP) produces a significant enhancement of the open circuit voltage Voc of epitaxial wafer equivalents on low cost silicon substrates. An increase of up to 12 mV is shown on ungettered and up to 16 mV on gettered highly doped multicrystalline silicon substrates. Combining all process optimisations should result in efficiencies higher than 15% on Cz and 14% on mc.
Starting Page	1
Ending Page	6
File Size	4650553
Page Count	6
File Format	PDF
ISBN	9781424416400
ISSN	01608371
DOI	10.1109/PVSC.2008.4922814
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-05-11
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Crystallization Silicon Semiconductor thin films Photovoltaic cells Substrates Costs Circuits Voltage Plasma applications Transistors
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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