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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Martinez, Omar S. Palomera, Roger C. Enriquez, Joel P. Alonso, Claudia M. Xiangxin Liu, Mathews, Nini R. Mathew, Xavier Compaan, Alvin D. |
| Copyright Year | 2008 |
| Description | Author affiliation: Centro de Investigación en Energía, Universidad Nacional Autónoma de México, 62580, Temixco, Morelos, México (Martinez, Omar S.; Palomera, Roger C.; Alonso, Claudia M.; Mathews, Nini R.; Mathew, Xavier) || Universidad Politécnica de Chiapas, México (Enriquez, Joel P.) || Dept. of Physics & Astronomy, Univ. of Toledo, 43606, OH, USA (Xiangxin Liu,; Compaan, Alvin D.) |
| Abstract | In order to achieve advances in CdTe technology, we are continuing our efforts in developing wide band gap ternary alloy films based on CdTe. This approach will help in harnessing the already existing CdTe technology to develop high efficiency tandem devices. The band gap of CdTe can be easily tuned from 1.48 to 1.8 eV (x=0 to 0.17). Close match of the lattice constant of MgTe with CdTe and the apparent complete miscibility of MgTe in CdTe and the rapid increase in band gap with Mg content gives the flexibility to prepare material with appropriate band gap for current- matching in a tandem solar cell. In this paper development of CdTe films by vacuum co-evaporation and prototype CdTe/CdS solar cells are reported. The co-evaporated films on large area substrates exhibited high spatial uniformity. We have used different experimental techniques such as XRD, Raman, PL, UV-VIS spectroscopy, and opto-electronic tools for studying the effect of Mg incorporation in to the lattice of CdTe. Evidences of lattice perturbations due to the incorporation of Mg were observed in XRD and Raman data, however no phase segregation was observed in the XRD spectra. We are continuing our investigation of the effect of post deposition chloride treatment and annealing on the band gap stability of the CdTe films. Films chloride treated with MgCl2 exhibited better stability compared with those films annealed in CdCl vapor. However, our preliminary data on the CdS/CdTe devices show that CdCl vapor treatment is beneficial for attaining better efficiency. Prototype devices of the configuration Tec7/CdS/CdTe/Cu-Au was developed with CdTe films with different x values. Efficiency varies in the range 2 to 4.6% depending on the band gap of the absorber. |
| Starting Page | 1 |
| Ending Page | 5 |
| File Size | 1766664 |
| Page Count | 5 |
| File Format | |
| ISBN | 9781424416400 |
| ISSN | 01608371 |
| DOI | 10.1109/PVSC.2008.4922634 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2008-05-11 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Wideband Tellurium Photonic band gap Lattices X-ray scattering Photovoltaic cells Prototypes Spectroscopy Annealing Stability |
| Content Type | Text |
| Resource Type | Article |
| Subject | Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering |
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