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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Archer, Melissa J. Law, Daniel C. Mesropian, Shoghig Boca, Andreea Haddad, Moran Ladous, Corinne King, Richard R. Atwater, Harry A. |
| Copyright Year | 2008 |
| Description | Author affiliation: California Institute of Technology, 1200 East California Boulevard, Pasadena, 91125, USA (Archer, Melissa J.; Atwater, Harry A.) || Aonex Corporation, 129 North Hill Avenue, Suite 108, Pasadena, California 91106, USA (Ladous, Corinne) || Spectrolab Engineering Inc., 12500 Gladstone Avenue, Sylmar, California 91342, USA (Law, Daniel C.; Mesropian, Shoghig; Boca, Andreea; Haddad, Moran; King, Richard R.) |
| Abstract | In this study, we report synthesis of large area (≫ 2 $cm^{2})$ crack-free GaInP/GaAs double junction solar cells on 50 mm diameter Ge/Si templates fabricated using wafer bonding and ion implantation induced layer transfer techniques. Defect removal from the template film and film surface prior to epitaxial growth was found to be critical to achievement of high open circuit voltage and efficiency. Cells grown on templates prepared with chemical mechanical polishing in addition a wet chemical etch show comparable performance to control devices grown on bulk Ge substrates. Current-voltage (I–V) data under AM 1.5 illumination indicate that the short circuit current is comparable in templated and control cells, but the open circuit voltage is slightly lower (2.08V vs. 2.16V). Spectral response measurements indicate a drop in open circuit voltage due to a slight lowering of the top GaInP cell band gap. The drop in band gap is due to a difference in the indium composition in the two samples caused by the different miscut (9° vs. 6°) of the two kinds of substrates. |
| Starting Page | 1 |
| Ending Page | 4 |
| File Size | 5251310 |
| Page Count | 4 |
| File Format | |
| ISBN | 9781424416400 |
| ISSN | 01608371 |
| DOI | 10.1109/PVSC.2008.4922585 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2008-05-11 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Gallium arsenide Photovoltaic cells Circuits Voltage Chemicals Substrates Photonic band gap Wafer bonding Ion implantation Surface cracks |
| Content Type | Text |
| Resource Type | Article |
| Subject | Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering |
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