NDLI: Determination of back contact barrier height in Cu(In,Ga)(Se,S) and CdTe solar cells

Content Provider	IEEE Xplore Digital Library
Author	Koishiyev, Galymzhan T. Sites, James R. Kulkarni, Sachin S. Dhere, Neelkanth G.
Copyright Year	2008
Description	Author affiliation: Florida Solar Energy Center, University of Central Florida, Cocoa, United States (Kulkarni, Sachin S.; Dhere, Neelkanth G.) \|\| Physics Department, Colorado State University, Fort Collins, United States (Koishiyev, Galymzhan T.; Sites, James R.)
Abstract	A relatively straightforward technique has been developed to quantify the energy barrier for holes between a Cu(In,Ga)(Se,S) (CIGSeS) or CdTe absorber and the back-contact metallization. The input data is the current-voltage (J-V) curves for the solar cell measured over a range of temperatures. The key parameter is the “turning current” J, which is the current at the transition from the positive J-V curvature of a diode to the negative curvature associated with current limitation at a contact barrier. The analytical strategy is to calculate a series of J vs. T curves for different values of barrier height and then overlay the experimental values of J. Generally the experimental data follow a single barrier-height curve over a wide temperature range. The presentation will describe the turning point technique and apply it to specific solar-cell examples. The range of J that can be practically identified extends from approximately 0.1 to 80 $mA/cm^{2}.$ Assuming that temperatures between 220 and 340 K are available, the range of barriers that can be determined is between 0.30 and 0.55 eV. This is also the practical range, since lower barriers do not have a measurable effect on the power quadrant and higher ones effectively kill the performance of the cell. Many CIGSeS and CdTe cells, however, do have a back-contact barrier in the 0.30 to 0.55 eV range, and the ability to determine it can assist both cell analysis and process optimization.
Starting Page	1
Ending Page	3
File Size	517080
Page Count	3
File Format	PDF
ISBN	9781424416400
ISSN	01608371
DOI	10.1109/PVSC.2008.4922886
Language	English
Publisher	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Publisher Date	2008-05-11
Publisher Place	USA
Access Restriction	Subscribed
Rights Holder	Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subject Keyword	Photovoltaic cells Temperature distribution Semiconductor diodes Solar energy Turning Physics Energy measurement Energy barrier Metallization Voltage
Content Type	Text
Resource Type	Article
Subject	Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering

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