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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Davies, A. R. Sites, J. R. |
| Copyright Year | 2008 |
| Description | Author affiliation: Colorado State University, Fort Collins, 80523, USA (Davies, A. R.; Sites, J. R.) |
| Abstract | The behavior of CdS/CdTe devices with very little Cu in the back-contact was investigated. Though the devices maintain decent voltage (V ∼760–780 mV), the fill factor suffers (FF ∼ 45–50%) due to a secondary curvature in the power quadrant of the J-V plane. Capacitance results indicate full depletion, and laser-beam-induced-photocurrent mapping indicates spatial QE variations of several percent at voltage-bias near that of the initial diode turn-on. Guided by the LBIC results, we have developed an expanded equivalent circuit model to approximate effects of non-uniform back-contact barrier not explained by the traditional two-diode model [1]. PSpice modeling of the new circuit model successfully accounts for the non-standard rollover in the experimental J-V behavior. |
| Starting Page | 1 |
| Ending Page | 3 |
| File Size | 4170380 |
| Page Count | 3 |
| File Format | |
| ISBN | 9781424416400 |
| ISSN | 01608371 |
| DOI | 10.1109/PVSC.2008.4922878 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2008-05-11 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Photovoltaic cells Capacitance Voltage Schottky barriers Laser modes Semiconductor diodes Equivalent circuits Capacitance-voltage characteristics Schottky diodes Semiconductor thin films |
| Content Type | Text |
| Resource Type | Article |
| Subject | Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering |
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