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| Content Provider | IEEE Xplore Digital Library |
|---|---|
| Author | Adhikari, Sudip Adhikari, Sunil Aryal, Hare Ram Ghimire, Dilip C. Kalita, Golap Hideo Uchida, Umeno, Masayoshi |
| Copyright Year | 2008 |
| Description | Author affiliation: Dept. of Electrical and Electronic Engineering, Chubu University, 1200 Matsumoto-cho, Kasugai 487-8501 Japan (Aryal, Hare Ram; Ghimire, Dilip C.; Kalita, Golap) || Dept. of Hydrology and Meteorology, Tri-Chandra Campus, Tribhuvan University, G.P.O. 8974, Kathmandu CPC122, Nepal (Adhikari, Sunil) || Dept. of Electronics and Information Engineering, Chubu University, 1200 Matsumoto-cho, Kasugai 487-8501 Japan (Adhikari, Sudip; Hideo Uchida,; Umeno, Masayoshi) |
| Abstract | In this paper, we report the effect of acetylene (C) flow rates (5 to 20 sccm) on the compositional and structural variations of nitrogen doped amorphous carbon (a-C:N) thin films grown by surface-wave mode microwave plasma chemical vapor deposition at low temperature (≪100 °C). Argon was used as the main plasma source gas. The films were characterized by X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, UV/VIS/NIR spectroscopy and Fourier transform infrared spectroscopy (FTIR) measurements. The deposition rate of the films was typically 10 nm/min. The Tauc optical band gap of the films was in the range 1.6–1.8 eV. The XPS results show successful doping of nitrogen in the films, whereas N atomic concentration (at.%) into the films varied in the range of 23 to 35%. The N at.% in the films did not correlate with the increase of C flow rate (i.e. decrease of nitrogen gas concentration). The maximum percentage of nitrogen take up was observed in the film grown at C flow rate of 10 sccm. The FTIR results show enhanced contribution of C=C $sp^{2}$ and C-N $sp^{3}$ bonds with increasing C flow rate. The increase of C-H vibration mode around 3300 $cm^{−1}$ indicates the increase of $sp^{3}-bonded$ carbon in the films. The amorphous nature of the films was qualitatively understood from the Raman results. |
| Starting Page | 1 |
| Ending Page | 3 |
| File Size | 737060 |
| Page Count | 3 |
| File Format | |
| ISBN | 9781424416400 |
| ISSN | 01608371 |
| DOI | 10.1109/PVSC.2008.4922648 |
| Language | English |
| Publisher | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Publisher Date | 2008-05-11 |
| Publisher Place | USA |
| Access Restriction | Subscribed |
| Rights Holder | Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subject Keyword | Nitrogen Amorphous materials Optical films Spectroscopy Raman scattering Plasma chemistry Plasma measurements Plasma sources Plasma temperature Sputtering |
| Content Type | Text |
| Resource Type | Article |
| Subject | Industrial and Manufacturing Engineering Control and Systems Engineering Electrical and Electronic Engineering |
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